期刊：
IEEE INTERNET OF THINGS JOURNAL,2020年7(10):9919-9929 ISSN：2327-4662
通讯作者：
Yi, Lingzhi
作者机构：
[Deng, Xianjun; Jiang, Yalan] Univ South China, Sch Elect Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang 421001, Peoples R China.;[Yang, Laurence T.; Yi, Lingzhi] St Francis Xavier Univ, Dept Comp Sci, Antigonish, NS B2G 2W5, Canada.;[Yi, Lingzhi] Univ South China, Sch Civil Engn, Hengyang 421001, Peoples R China.;[Chen, Jiaoyan] Nanchang Univ, Sch Informat Engn, Nanchang 330031, Jiangxi, Peoples R China.;[Liu, Yong; Li, Xiangyang] Univ South China, Sch Resource Environm & Safety Engn, Hunan Prov Engn Res Ctr Radioact Control Technol, Hengyang 421001, Peoples R China.
通讯机构：
[Yi, Lingzhi] U;Univ South China, Sch Civil Engn, Hengyang 421001, Peoples R China.
关键词：
Oceans;Learning automata;Surveillance;Sensors;Internet of Things;Peer-to-peer computing;Barrier coverage;confident information coverage (CIC) model;Internet of Things (IoT);learning automata (LA);smart ocean
摘要：
As an emerging network paradigm, the Internet of Things (IoT) which consists of a significant number of multifunctional and heterogeneous IoT nodes has attracted dramatic attentions from both academia and industry. With the merits of intelligent capacity, desirable scalability, and high reliability, the IoT recently has been applied for smart ocean applications to provide protection for ocean environment monitoring and surveillance. Aiming to provide coverage service for ocean border environmental surveillance, this article studies the barrier coverage problem which investigates how to select a collection of IoT nodes to obtain an IoT node chain and build barrier paths to detect intruders and trespassers crossing the border region of interest. To overcome the disadvantages in the existing works on barrier coverage, we adopt a novel and widely adopted confident information coverage (CIC) model as the fundamental coverage model and formulate the CIC barrier path construction (CICBC) problem with the goals of maximizing the number of barrier paths and minimizing the amount of IoT nodes in each barrier path. We propose a distributed CIC barrier path (CICBP) construction approach based on learning automata (CBLA). The CBLA includes four crucial phases which are initialization phase, learning phase, monitoring phase, and repairing phase. Each IoT node equips a learning automaton. CBLA selects an optimal IoT node to construct the barrier path by learning. The simulation results show that the performance of the CBLA algorithm outperforms two peer algorithms in terms of the number of barrier paths and the average number of nodes in each barrier path.
期刊：
2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018,2019年:18-19
通讯作者：
He, Hongyu
作者机构：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.;[Liu, Yuan; Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.;[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.
通讯机构：
[He, Hongyu] U;[He, Hongyu] P;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.
会议名称：
9th Inthernational Conference on Computer Aided Design for Thin-Film Transistors (CAD-TFT)
会议时间：
NOV 16-18, 2018
会议地点：
Shenzhen, PEOPLES R CHINA
会议主办单位：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.^[Liu, Yuan;Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.^[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.
关键词：
Amorphous silicon;analytical model;polycrystalline silicon;thin-film transistor;trap states
摘要：
Our previous drain current model for the organic and amorphous InGaZnO thin-film transistors is applied to the amorphous and polycrystalline silicon thin-film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified by the available experimental data at different temperatures.
期刊：
IEEE Transactions On Electron Devices,2017年64(9):3654-3660 ISSN：0018-9383
通讯作者：
He, Hongyu
作者机构：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[He, Hongyu] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.;[Liu, Yuan; Zheng, Xueren] South China Univ Technol, Sch Microelect, Guangzhou 510640, Guangdong, Peoples R China.;[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.;[Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen Key Lab Adv Electron Device & Integrat, Shenzhen 518005, Peoples R China.
通讯机构：
[He, Hongyu] U;[He, Hongyu] P;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
关键词：
Analytical model;drain current;temperature characteristics;thin-film transistor (TFT);trap states
摘要：
Surface-potential-based drain current model is presented for amorphous InGaZnO thin-film transistors considering both exponential deep and tail trap states densities in the energy gap. The trap states densities are determined by the numerical calculation on the basis of the assumption that the trapped carrier concentration is much higher than the free carrier concentration. The analytical drain current model is developed consistent with the numerical calculation, and verified by the experimental data at different temperatures.
作者机构：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.;[Liu, Yuan; Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.;[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.
会议名称：
24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
会议时间：
JUL 04-07, 2017
会议地点：
Chengdu, PEOPLES R CHINA
会议主办单位：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.^[Liu, Yuan;Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.^[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.
会议论文集名称：
IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
摘要：
Based on the Meyer-Neldel Rule (MNR), analytical drain current model is presented for the polycrystalline ZnO thin-film transistors at different temperatures. The MNR-based drain current model is developed from the surface-potential-based model considering the effective medium approximation (EMA). Applying the Meyer-Neldel Rule, the drain current model is developed. The model results are in agreement with the available experimental data at different temperatures.
期刊：
2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC),2016年:307-309
通讯作者：
He, Hongyu
作者机构：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.;[Deng, Wanling] Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China.;[Liu, Yuan] China Elect Produce Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.;[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.
通讯机构：
[He, Hongyu] U;[He, Hongyu] P;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
会议名称：
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
会议时间：
AUG 03-05, 2016
会议地点：
Univ Hong Kong, Hong Kong, PEOPLES R CHINA
会议主办单位：
Univ Hong Kong
会议论文集名称：
IEEE International Conference on Electron Devices and Solid-State Circuits
摘要：
Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression I-DS is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression S-IDS is derived from the carrier number fluctuation theory. It is proved that S-IDS is proportional to I-DS(2), approximately. The current and noise expressions are verified by available experimental data.
期刊：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016,2016年:1-2 ISSN：2159-3523
通讯作者：
He, Hongyu
作者机构：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.;[Liu, Yuan] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.;[Wang, Hao] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China.;[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.
通讯机构：
[He, Hongyu] U;[He, Hongyu] P;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
会议名称：
7th IEEE International Nanoelectronics Conference (IEEE INEC)
会议时间：
MAY 07-11, 2016
会议地点：
Chengdu, PEOPLES R CHINA
会议主办单位：
[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.^[Liu, Yuan] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.^[Wang, Hao] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China.^[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.
会议论文集名称：
International Nanoelectronics Conference
摘要：
The 1/f noise characteristics are analyzed for the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in both subthreshold regime and above-threshold regime. Based on carrier number fluctuation model, our previous 1/f noise model for the amorphous InGaZnO TFTs is applied to the poly-Si TFTs considering mobility power-law parameter. The mobility power-law parameter determines the relationship between normalized drain current noise power spectral density (PSD) and drain current. The relationship is verified by the available experimental data.
期刊：
Advances in Modelling and Analysis C,2003年58(3-4):59-66 ISSN：1240-4535
通讯作者：
Sun, J.
作者机构：
[Sun, Jitao; Zhang, Yinping] Dept. of Appl. Math., Tongji University, Shanghai, 200092, China;[Deng, Feiqi; Liu, Yongqing] Dept. of Auto., South China University, Guangzhou, 510640, China
通讯机构：
[Sun, J.] D;Dept. of Appl. Math., Tongji University, China
关键词：
Absolute stability;Lurie type control system;Time delay;Uncertainty
摘要：
This paper studies the robust absolute stability of uncertain Lurie control systems. The Lyapunov function method and Riccati equation method are used to study the robust absolute stability of uncertain Lurie type control systems with time delay. Some sufficient conditions of robust absolute stability are obtained for the uncertain Lurie type control systems with time delay as follows ẋ(t) = (A + ΔA)x(t) + (B + ΔB)x(t - τ) + (b + Δb)f(δ), δ = CT x and ẋ(t) = (A + ΔA)x(t) + (B + ΔB)x(t - τ) + (b + Δb)f(δ), δ̇ = CT x - ρf(δ) The numerical examples illustrate the effectiveness of the proposed results.
