期刊论文

Cai, Shuting;Chen, Rongsheng

英文

IEEE Transactions On Electron Devices

0018-9383

2019

66

5

2192-2197

10.1109/TED.2019.2902449

Manuscript received November 27, 2018; revised February 2, 2019 and February 24, 2019; accepted February 26, 2019. Date of publication March 13, 2019; date of current version April 22, 2019. This work was supported in part by the National Natural Science Foundation of China under Grant 61574048, in part by the Pearl River S&T Nova Program of Guangzhou under Grant 201710010172, in part by the International Science & Technology Cooperation Program of Guangzhou under Grant 201807010006, in part by the International Cooperation Program of Guangdong under Grant 2018A050506044, and in part by the Opening Fund of Key Laboratory of Silicon Device Technology under Grant KLSDTJJ2018-6. (Corresponding authors: Rongsheng Chen; Shuting Cai.) Y. Liu, S. Cai, and X. Xiong are with the School of Automation, Guangdong University of Technology, Guangzhou 510006, China (e-mail: shutingcai@gdut.edu.cn).

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The carrier transport mechanisms in indium-zinc-oxide thin-film transistors are investigated in this paper by use of low-frequency noise (LFN). First, LFNs are measured in the range from 10 to 300 K. The measured noises show that the device is varied from an interface-dominated device to a bulk-dominated device at lower temperature, which induce to the variation of the power coefficient of normalized noise against the effective gate voltage. Moreover, the measured noise increases with decreasing temperature in the range of 200-300 K. Below 200 K, the measured noise decreases with the decrement...