期刊论文、会议论文

He, Hongyu

英文

2018 9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018

2019

18-19

9th International Conference on Computer Aided Design for Thin-Film Transistor Technologies, CAD-TFT 2018

16 November 2018 through 18 November 2018

Shenzhen, PEOPLES R CHINA

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.^[Liu, Yuan;Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.^[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.

345 E 47TH ST, NEW YORK, NY 10017 USA

Institute of Electrical and Electronics Engineers Inc.

9781728100968

10.1109/CAD-TFT.2018.8608111

ACKNOWLEDGMENT This work was supported by the National Science Foundation of China under Project 61504003, in part by the Guangdong Scientific Program under Project 2016A030313382, in part by Shenzhen Key Lab Project ZDSYS20170303140513705, in part by the Shenzhen Scientific Program under Project JCYJ20160510144204207, in part by the Thin-Film Transistor and Advanced Display Laboratory, Shenzhen, in part by the Shenzhen Key Laboratory of Advanced Electron Device and Integration, and in part by the Doctoral Foundation of University of South China under Project 2015XQD04.

本校为第一且通讯机构

Our previous drain current model for the organic and amorphous InGaZnO thin-film transistors is applied to the amorphous and polycrystalline silicon thin-film transistors. In the drain current model, it is assumed that the trapped carrier concentration is much higher than the free carrier concentration considering both deep trap states and tail trap states in the energy gap of the thin film. The model is valid in both subthreshold and above-threshold regime, and is verified b...