Low-frequency noise (LFN) is investigated in a set of indium-zinc-oxide thin-film transistors (IZO TFTs) with fixed channel width ( W = 10~\mu \text{m} ) and different channel lengths ( L\,\,=10 , 20, 30, and 40~\mu \text{m} ) from sub-threshold, linear to saturation regions. The drain current noise power spectral density is measured as a function of effective gate voltage and drain current. The variation slopes of normalized noise with effective gate voltage are in the range of -1.27 and -1.48, which are close to the prediction of the mobility fluctuation mechanism. According to the \Delta N-...
