期刊论文、会议论文

He, Hongyu

英文

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016

2159-3523

2016

1-2

7th IEEE International Nanoelectronics Conference (IEEE INEC)

International Nanoelectronics Conference

MAY 07-11, 2016

Chengdu, PEOPLES R CHINA

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.^[Liu, Yuan] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.^[Wang, Hao] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China.^[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

978-1-4673-8969-3

10.1109/INEC.2016.7589254

本校为第一且通讯机构

The 1/f noise characteristics are analyzed for the polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in both subthreshold regime and above-threshold regime. Based on carrier number fluctuation model, our previous 1/f noise model for the amorphous InGaZnO TFTs is applied to the poly-Si TFTs considering mobility power-law parameter. The mobility power-law parameter determines the relationship between normalized drain current noise power spectral density (PSD) and drain current. The ...