期刊论文

He, Hongyu

英文

IEEE Transactions On Electron Devices

0018-9383

2017

64

9

3654-3660

10.1109/TED.2017.2721436

Manuscript received June 18, 2017; revised June 23, 2017; accepted June 27, 2017. Date of publication July 17, 2017; date of current version August 21, 2017. This work was supported in part by the Thin-Film Transistor and Advanced Display Laboratory, Shenzhen, in part by the Shenzhen Key Laboratory of Advanced Electron Device and Integration, in part by the National Science Foundation of China under Project 61504003 and Project 61574048, in part by the Guangdong Scientific Program under Project 2014B050505005, Project 2015A030310273, and Project 2016A030313382, in part by the Shenzhen Scientific Program under Project JCYJ20160510144204207, and in part by the Pearl River S&T Nova Program of Guangzhou under Project 201710010172. The review of this paper was arranged by Editor J. Huang.

本校为第一且通讯机构

Surface-potential-based drain current model is presented for amorphous InGaZnO thin-film transistors considering both exponential deep and tail trap states densities in the energy gap. The trap states densities are determined by the numerical calculation on the basis of the assumption that the trapped carrier concentration is much higher than the free carrier concentration. The analytical drain current model is developed consistent with the numerical calculation, and ...