Analytical Drain Current Model for Organic Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

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作者信息关键词期刊信息基础信息归属信息摘要

成果类型：

期刊论文

作者：

He, Hongyu*;Liu, Yuan;Yan, Binghui;Lin, Xinnan;Zheng, Xueren;...

通讯作者：

He, Hongyu

作者机构：

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.

[Liu, Yuan] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.

[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.

[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Peoples R China.

通讯机构：

[He, Hongyu] U

Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

语种：

英文

关键词：

Compact model;temperature characteristics;thin-film transistor (TFT);trap states

期刊：

IEEE Transactions On Electron Devices

ISSN：

0018-9383

年：

2016

卷：

期：

页码：

4423-4431

DOI：

10.1109/TED.2016.2612679

基金类别：

Thin-Film Transistors and Advanced Display Laboratory, Shenzhen Shenzhen Scientific Program (Grant Number: JCYJ20160510144204207) Guangdong Scientific Program (Grant Number: 2014B050505005, 2016A030313382 and 2015A030310273) 10.13039/501100001809-National Science Foundation of China (Grant Number: 61504003, 61574048 and 61574003)

机构署名：

本校为第一且通讯机构

院系归属：

电气工程学院

摘要：

Surface-potential-based drain current model is presented for organic thin-film transistors considering both exponential deep and tail trap states densities. The model is derived on the basis of the assumption that the trapped carrier concentration dominates Poisson's equation. An analytical drain current expression is obtained. The expression is valid in both subthreshold and above-threshold regimes. The calculated results are verified by availabl...

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