Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors

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作者信息关键词期刊信息会议信息基础信息归属信息摘要

成果类型：

期刊论文、会议论文

作者：

He, Hongyu*;Deng, Wanling;Liu, Yuan;Lin, Xinnan;Zheng, Xueren;...

通讯作者：

He, Hongyu

作者机构：

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.

[Deng, Wanling] Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China.

[Liu, Yuan] China Elect Produce Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.

[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.

通讯机构：

[He, Hongyu] U

[He, Hongyu] P

Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.

语种：

英文

期刊：

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

年：

2016

页码：

307-309

会议名称：

IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

会议论文集名称：

IEEE International Conference on Electron Devices and Solid-State Circuits

会议时间：

AUG 03-05, 2016

会议地点：

Univ Hong Kong, Hong Kong, PEOPLES R CHINA

会议主办单位：

Univ Hong Kong

会议赞助商：

IEEE, Electron Devices Soc, SSCS, IEEE ED SSC Hong Kong Joint Chapter

出版地：

345 E 47TH ST, NEW YORK, NY 10017 USA

出版者：

IEEE

ISBN：

978-1-5090-1830-7

DOI：

10.1109/EDSSC.2016.7785269

机构署名：

本校为第一且通讯机构

院系归属：

电气工程学院

摘要：

Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression I-DS is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression S-IDS is derived from the carrier number fluctuation theory. It is proved that S-IDS is proportional to I-DS(2), approximately. The current and no...

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Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors

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