Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors

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成果类型：

会议论文

作者：

He, Hongyu*;Deng, Wanling;Liu, Yuan;Lin, Xinnan;Zheng, Xueren;...

通讯作者：

He, Hongyu

作者机构：

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.

[Deng, Wanling] Jinan Univ, Dept Elect Engn, Guangzhou 510632, Guangdong, Peoples R China.

[Liu, Yuan] China Elect Produce Reliabil & Environm Testing R, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Guangdong, Peoples R China.

[Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.

通讯机构：

[He, Hongyu] U

[He, Hongyu] P

Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.

语种：

英文

期刊：

2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)

年：

2016

页码：

307-309

会议名称：

IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

会议论文集名称：

IEEE International Conference on Electron Devices and Solid-State Circuits

会议时间：

AUG 03-05, 2016

会议地点：

Univ Hong Kong, Hong Kong, PEOPLES R CHINA

会议主办单位：

Univ Hong Kong

会议赞助商：

IEEE, Electron Devices Soc, SSCS, IEEE ED SSC Hong Kong Joint Chapter

出版地：

345 E 47TH ST, NEW YORK, NY 10017 USA

出版者：

IEEE

ISBN：

978-1-5090-1830-7

DOI：

10.1109/EDSSC.2016.7785269

机构署名：

本校为第一且通讯机构

院系归属：

电气工程学院

摘要：

Simple drain current and 1/f noise expressions are presented for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) in leakage regime. The leakage current expression Ids is derived from the thermal field emission mechanism. The leakage current noise power spectral density (PSD) expression SIds is derived from the carrier number fluctuation theory. It is proved that SIds is proportional to IDS, approximately. The current and noise expressions are verified by available experimental data.

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Simple leakage Current and 1/f Noise Expressions for Polycrystalline Silicon Thin-Film Transistors

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