期刊论文、会议论文

He, Hongyu

英文

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

1946-1550

2017

2017-July

1-4

24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

JUL 04-07, 2017

Chengdu, PEOPLES R CHINA

[He, Hongyu] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.^[He, Hongyu;Lin, Xinnan;Zhang, Shengdong] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518005, Peoples R China.^[Liu, Yuan;Zheng, Xueren] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China.^[Yan, Binghui] South China Agr Univ, Coll Elect Engn, Guangzhou 510642, Guangdong, Peoples R China.

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

978-1-5386-1779-3

10.1109/IPFA.2017.8060136

Shenzhen Scientific Program [JCYJ20160510144204207]; National Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61504003, 61574048]; Guangdong Scientific Program [2016A030313382]

本校为第一且通讯机构

Based on the Meyer-Neldel Rule (MNR), analytical drain current model is presented for the polycrystalline ZnO thin-film transistors at different temperatures. The MNR-based drain current model is developed from the surface-potential-based model considering the effective medium approximation (EMA). Applying the Meyer-Neldel Rule, the drain current model is developed. The model results are in agreement with the available experime...