通讯机构：
[He, HY; Wang, XL ] U;[He, HY ] Y;Univ South China, Sch Nucl Sci & Technol, Hengyang, Hunan, Peoples R China.;Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang, Hunan, Peoples R China.;Yangtze Univ, Sch Elect Informat & Elect Engn, Jingzhou, Peoples R China.
摘要：
Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature and radiation-rich environments due to its excellent thermal conductivity and radiation resistance. However, real 4H-SiC crystals often contain Shockley-type stacking faults (SSF), which can affect their radiation resistance. This study employed molecular dynamics (MD) simulation method to explore the effects of SSF on radiation displacement cascades in 4H-SiC. We conducted a comprehensive study of various SSF within the crystalline framework of 4H-SiC, and analyzed their stacking fault energy (SFE). We simulated the radiation displacement cascade in 4H-SiC with SSF and analyzed the effects of SSF on the distribution of radiation displacement defects. We simulated the radiation displacement cascade in 4H-SiC with SSF under different energies of primary knock-on atom (EPKA) and temperatures (T) conditions, and analyzed the variation pattern of the number of radiation displacement defects and clusters. The results indicated that SSF limits defect distribution position. SSF has an effect on the defects and clusters of 4H-SiC in the displacement cascade, and SSF can affect the maximum working temperature of 4H-SiC. Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature and radiation-rich environments due to its excellent thermal conductivity and radiation resistance. Shockley-type stacking faults serve as one of the factors influencing the radiation resistance of 4H-SiC.
作者机构：
[Lin, Yinghua; Wang, Xinlin; Lin, YH; Liu, Lipei] Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micronano Technol & A, Hengyang 421001, Peoples R China.;[Peng, Longsheng] Hunan Lifang Roller Co Ltd, Hengyang 421681, Peoples R China.;[Peng, Longsheng] Hunan Adv Mfg Engn Technol Res Ctr High Wear Resis, Hengyang 421681, Peoples R China.;[Kang, Xin; Kang, X] Putian Univ, Sch Mech Elect & Informat Engn, Putian 351100, Peoples R China.
通讯机构：
[Kang, X ] P;[Lin, YH ] U;Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micronano Technol & A, Hengyang 421001, Peoples R China.;Putian Univ, Sch Mech Elect & Informat Engn, Putian 351100, Peoples R China.
关键词：
laser cladding;surface strengthening;Fe-based alloy;high hardness;microstructure design and control
摘要：
High-hardness iron-based alloy coatings are extensively utilized in aerospace, automotive, and industrial equipment due to their exceptional wear resistance and long service life. Laser cladding has emerged as one of the primary techniques for fabricating these coatings, owing to its rapid cooling and dense microstructure characteristics. However, the production of high-hardness iron-based alloy coatings via laser cladding continues to face numerous challenges, particularly when controlling the morphology, quantity, and distribution of the reinforcing phases, which can lead to cracking during processing and service, thus compromising their usability. The cracks of the cladding layer will be suppressed through good microstructure design and control, resulting in a wide range of performance for high-hardness Fe-based alloy coatings. This paper reviews recent advancements in the design and control of the organization and structure of high-hardness iron-based alloy coatings from the perspectives of material composition, processing parameters, and external assistance techniques. It summarizes the properties and applications of various materials, including different alloying elements, ceramic particles, and rare earth oxides, while systematically discussing how processing parameters influence microstructure and performance. Additionally, the mechanisms by which external auxiliary energy fields affect the melt pool and solidified microstructure during laser cladding are elucidated. Finally, the future development directions of laser cladding technology for high-hardness iron-based coatings are anticipated, emphasizing the need for further quantification of the optimal coupling relationships among the gain effects of composite energy fields.
摘要：
With the molecular dynamics method, this paper investigates radiation-induced defects in the In0.16Ga0.84N/GaN superlattice structure (SLS) and the In0.04Ga0.96N/GaN SLS. In the temporal evolution of cascades, most of vacancies recombine with interstitials. The Monte Carlo simulations about the proportions of PKAs induced by 3 MeV protons were also considered in this work for calculating the weighted averages of surviving defects. For the In0.16Ga0.84N/GaN SLS irradiated by protons, around 82.6 percent of surviving vacancies are Ga vacancies while around 88.9 percent of surviving interstitials are Ga interstitials. For the In0.04Ga0.96N/GaN SLS irradiated by protons, around 87.3 percent of surviving vacancies are Ga vacancies while around 88.6 percent of surviving interstitials are Ga interstitials. N vacancies, N interstitials, and In vacancies also exist in irradiated InGaN/GaN SLS. Details about different types of defects are presented in this paper, which helps explain the microscopic mechanism of irradiated InGaN/GaN SLS. Since different types of defects have different influences on electronic and optical properties, simulations about the proportions of various defects in irradiated InGaN/GaN SLS help experimentalists find the effective factors of radiation-related changes in electronic and optical properties.
通讯机构：
[Li, YH ] U;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
关键词：
Pixel circuit;LTPS TFTs;Threshold voltage variation;Mobility variation;Voltage drop;OLED degradation
摘要：
A voltage-programmed pixel circuit based on low-temperature poly-silicon (LTPS) thin-film transistors (TFTs) is presented for active-matrix organic light-emitting diode (AMOLED) displays. The circuit consists of six ptype transistors and one capacitor (6T1C). During the extraction stage, the circuit extracts the driving TFT's threshold voltage and the power supply voltage. During the data input stage, the circuit generates a charging voltage, which is associated with the driving TFT's mobility and the OLED's threshold voltage. Consequently, the pixel circuit, using only one capacitor, compensates not only for the TFT's electrical characteristics variations, i.e., the threshold voltage variation and mobility variation, but also for the power supply voltage drop and the OLED degradation. The circuit simulation results reveal that the OLED current error rates (CERs) are lower than 5.09% when the threshold voltage varies by +/- 0.5 V, lower than 3.61% when the mobility varies by +/- 30%, and lower than 9.16% when the voltage drop varies by -0.5 V in the data voltage range.
摘要：
损伤Cr12MoV冷轧工作辊的激光修复需要实现熔覆层性能恢复至与原母材性能相当，然而，采用激光熔覆Fe90合金粉末制备的熔覆层的冲击韧性、耐磨性与Cr12MoV冷轧工作辊性能存在差异。本课题组在Fe90合金粉末的基础上，通过添加一定的Mo和Ni元素来解决熔覆层冲击韧性和耐磨性不足的问题。结果表明：Mo和Ni添加前，Fe90熔覆层的显微组织主要为包覆等轴晶和柱状晶的类网状组织，晶粒度为5.47 μm，物相为α-（Fe，Cr）和M7C3，显微硬度、冲击吸收能（带基底）、磨损量和摩擦因数分别为795.71 HV、2.37 J/cm2、0.8 mg和0.75；共同添加Mo和Ni后，熔覆层的显微组织主要为包覆等轴晶的类网状组织，晶粒度降低至5.28 μm，α-（Fe，Cr）物相含量降低，Mo2C硬质相含量提高，显微硬度、冲击吸收能（带基底）、磨损量和摩擦因数分别为689.92 HV、2.74 J/cm2、0.4 mg和0.65。Mo和Ni的共同添加使得熔覆层的冲击韧性和耐磨性都得以提高，这主要得益于Mo2C耐磨相含量提高、晶粒细化以及Cr偏析率降低的协同作用。 您的浏览器不支持 audio 元素。AI语音播报 Objective The Cr12MoV roller is commonly used in rolling mills for rolling stainless steel sheets owing to its good impact toughness and wear resistance. However, surface spalling, sticking roller, and cracking inevitably occur during service of Cr12MoV rollers, which will consequently undergo damage. Currently, the most frequently used methods for remanufacturing and repairing Cr12MoV rollers are surfacing, thermal spraying, and laser cladding. Laser repair is a high-performance method for repairing damaged rollers because it produces dense tissue and metallurgical bonding at the interface. Thus, it has become an important technique for repairing damaged Cr12MoV rollers. The process of repairing damaged Cr12MoV cold rollers with lasers requires the restoration of the properties of the cladding layer for them to be comparable to those of the original base material. However, the impact toughness and wear resistance of the Fe90 alloy cladding prepared using laser cladding technology differ from those of the Cr12MoV cold rolling work roller. This study aims to 1) address the issue of insufficient impact toughness and wear resistance of the fusion cladding layer by adding a certain amount of Mo and Ni to the Fe90 alloy powder, and 2) provide a reference for repairing damage to Cr12MoV rollers. Methods First, the surface and internal cracks of cladding layers with different Mo and Ni contents were characterized. The presence of red lines on the surface of the cladding layer was used to determine the formation of cracks, which were mainly based on the permeation, capillary action, and adsorption principles of the testing agent. The internal cracks were identified by longitudinally and transversely intercepting, grinding, and polishing the fused cladding at different locations. Second, we investigated the effects of different Mo and Ni contents on the microstructure, physical phase composition, and elemental distribution of the fused cladding layers. XRD, SEM, and EDS surface and spot scans were used for this purpose. The lattice stress field of each fused cladding layer was calculated using the Williamson?Hall formula to demonstrate the potential increase in the lattice distortion resulting from the addition of Mo and Ni. Additionally, the impact of Mo and Ni additions on the segregation rate of elements within and between grains was demonstrated by computing the ratios of the inter- and intra-granular segregation of elements. Finally, the hardness, impact toughness, and wear resistance of various fused cladding layers were tested. The effects of different Mo and Ni additions on the wear mechanism of the fused cladding layers were analyzed in terms of changes in hardness, impact toughness, physical phase type and content, microstructure, and wear morphology. Corresponding evolution schematic diagrams were also created. Results and Discussions To systematically investigate the influence of Mo and Ni on the performance of the Fe90 cladding, we compared the effects of adding Mo and the joint addition of Mo and Ni on the microstructure, elemental segregation, and properties of the cladding layer. The joint addition of Mo and Ni enhanced the impact toughness and abrasion resistance of the Fe90 cladding, with only a slight reduction in its hardness. The properties of the cladding layer are correlated with its microstructure, physical phases, and elemental composition. The Mo2C phase is formed by the addition of Mo, which is a strong carbide (Fig. 3). This phase provides more nucleation sites for grain refinement (Fig. 4), which improves the impact toughness of the cladding layer (Fig. 9). Additionally, the inter-granular segregation of Cr is promoted (Fig. 5), which reduces the formation of the α-(Fe,Cr) phase and results in a slight decrease in hardness (Fig. 7). With the addition of the non-carbide element Ni, the formation of the Mo2C hard phase is further promoted. Although the organization may coarsen, the hardness is only slightly reduced. Furthermore, the wear resistance is not solely determined by high hardness, but by a combination of factors, including impact toughness and other properties. It was found that good wear resistance is achieved at low hardness and high impact toughness (Figs. 8 and 10). Additionally, the wear mechanism of the fused cladding layer shifts from abrasive to oxidative with the inclusion of Mo and Ni (Figs. 11 and 12). Conclusions Prior to the introduction of Mo and Ni, the microstructure of the Fe90 fusion-coated layer mainly consisted of a reticulation-like organization that encapsulated equiaxial and columnar crystals with a grain size of 5.47 μm. The physical phases present were α-(Fe,Cr) and M7C3. The microhardness, impact absorbed energy (with substrate), wear volume, and friction coefficient were 795.71 HV, 2.37 J/cm2, 0.8 mg, and 0.75, respectively. After the addition of 2%Mo+1%Ni, the microstructure of the fusion-coated layer consisted mainly of a reticulation-like organization that encapsulated equiaxial crystals. The grain size was reduced to 5.28 μm, the content of α?(Fe,Cr) material phase was decreased, and the content of Mo2C hard phase was increased. The microhardness, impact absorbed energy (with substrate), wear volume, and friction coefficient were 689.92 HV, 2.74 J/cm2, 0.4 mg, and 0.65. Therefore, it can be concluded that the impact toughness and wear resistance of the cladding layer are improved by combining Mo and Ni. This improvement is mainly due to the synergistic effect of the increase in the content of the wear-resistant phase of Mo2C, grain refinement, and reduction in the Cr segregation ratio.
关键词：
全介质超表面, 连续体束缚态, 准偶然连续体束缚态, 折射率传感, 慢光, all-dielectric metasurface, bound states in the continuum, accidental quasi-bound states in the continuum, refraction index sensing, slow-light
摘要：
近年来，光学超表面中的连续体束缚态（BIC）因其独特的性质而受到了广泛的关注。为了研究两个准偶然连续体束缚态（A-QBIC）模式之间相互作用诱导的新颖光学现象，提出一种方形纳米孔阵列全介质超表面。结果表明，在x偏振光和y偏振光入射时能实现A-BIC现象，尤其在45°偏振光入射下可实现两个A-QBIC模式间的相互作用。利用能带理论和多极展开理论对A-QBIC模式进行分析，发现这两种模式均由环形偶极模式主导。重要的是，基于A-QBIC模式的高Q值特性，能够构建高灵敏度折射率传感，同时利用两个A-QBIC模式间具有灵活调谐度的相互作用特性，还能够实现类电磁诱导透明和可调的慢光。研究结果可为基于A-QBIC的高Q超构器件在高灵敏度折射率传感及慢光等领域的应用提供理论参考。 您的浏览器不支持 audio 元素。AI语音播报 In recent years, bound states in the continuum (BIC) in optical metasurfaces have garnered significant attention owing to their unique properties. Because of the interaction of two accidental quasi-bound states in the continuum (A-QBIC) modes, we explore the related novel optical phenomena in an all-dielectric metasurface that comprises a square nano-aperture array. It is shown that the A-BIC phenomenon can occur under x- and y-polarized normal incidences but exhibits the interaction of the two A-QBIC modes under 45° polarized incidence. The A-QBIC modes, which are analyzed using band and multipole expansion theories, are primarily governed by the toroidal dipole. Notably, the high Q-factor of the A-QBIC modes not only allows for the implementation of highly sensitive refractive index sensing but also facilitates the realization of flexible tunability of the interaction between the two A-QBIC modes, thereby achieving an analogue of electromagnetically induced transparency and tunable slow-light. Our results provide a feasible strategy to develop a high Q-factor meta-device based on A-QBIC in highly sensitive refractive index sensing and slow-light applications.
会议论文集名称：
EITCE '23: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering
关键词：
Pixel circuit;Threshold voltage;Mobility;OLED degradation;Thin film transistors
摘要：
A voltage-programmed pixel circuit is presented for active-matrix organic light-emitting diode (AMOLED) displays. The circuit contains seven amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) and one capacitor. In the compensation stage, the circuit extracts the threshold voltages of the driving TFT and OLED, and obtains a mobility dependent discharge voltage. The circuit requires only one capacitor to compensate for variations of the electrical characteristics of the driving TFT, i.e. variations of threshold voltage and mobility, and the degradation of the OLED. The circuit simulation results show that the relative current error rates are below 5.70% for threshold voltage variations of +/- 0.5V, below 5.66% for mobility variations of +/- 30%.
会议论文集名称：
EITCE '23: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering
关键词：
Pixel circuit;LTPS TFTs;Threshold voltage variation;Mobility variation;Voltage drop;OLED degradation
摘要：
A voltage-programmed pixel circuit is presented for active-matrix organic light-emitting diode (AMOLED) displays. The circuit is made up by six p-type low temperature poly-silicon (LTPS) thin-film transistors (TFTs) and two capacitors (6T2C). In the extraction stage, the circuit extracts the driving TFT's threshold voltage and the power supply voltage. In the data input stage, the circuit generates a charging voltage, which is associated with the driving TFT's mobility and OLED's threshold voltage. Consequently, the pixel circuit not only compensates for the TFT's electrical characteristics variations, i.e., the threshold voltage and mobility variations, but also compensates for the voltage drop and the OLED degradation. The circuit simulation results show that the OLED current error rates (CERs) are lower than 7.13% when the threshold voltage varies +/- 0.5V, lower than 4.89% when the mobility varies +/- 30%, and lower than 8.92% when the voltage drop varies -0.5V.
期刊：
2023 5th International Conference on Frontiers Technology of Information and Computer (ICFTIC),2023年:679-682
作者机构：
[Xinlin Wang] College of Mechanical Engineering, University of South China, Hengyang, China;[Jiating Peng; Tiejun Zeng] School of Electrical Engineering, University of South China, Hengyang, China
会议名称：
2023 5th International Conference on Frontiers Technology of Information and Computer (ICFTIC)
会议时间：
17 November 2023
会议地点：
Qiangdao, China
会议论文集名称：
2023 5th International Conference on Frontiers Technology of Information and Computer (ICFTIC)
摘要：
Aiming at the problems of low precision and poor working stability of the microcontroller-based IRIG-B decoder, an FPGA-based IRIG-B decoding design scheme is proposed. Considering the IRIG-B code in the transmission process due to the existence of circuit parasitic effects and random noise, the signal waveform will produce the burr problem, the design is based on the combination of Schmitt trigger and median filter hardware to completely eliminate the burr and noise on the stability of the system, over the Questa simulation experiments verified the decoding accuracy of the scheme and the advantages of stability.
作者：
张景朝 Zhang Jingzhao;罗晓清 Luo Xiaoqing;徐晓峰 Xu Xiaofeng;骆又麟 Luo Youlin;朱卫华 Zhu Weihua;...
期刊：
激光与光电子学进展,2023年60(9):0925001 ISSN：1006-4125
作者机构：
[张景朝 Zhang Jingzhao; 罗晓清 Luo Xiaoqing; 徐晓峰 Xu Xiaofeng; 骆又麟 Luo Youlin; 朱卫华 Zhu Weihua; 陈志勇 Chen Zhiyong] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, Hunan, Hengyang, 421001, China;School of Mechanical Engineering, University of South China, Hunan, Hengyang, 421001, China;[王新林 Wang Xinlin] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, Hunan, Hengyang, 421001, China<&wdkj&>School of Mechanical Engineering, University of South China, Hunan, Hengyang, 421001, China
摘要：
数值研究了由同心C3型孔和圆环孔单元结构组成的复合超表面在近红外波段内的表面等离子体三重法诺共振效应与光学传感现象。研究结果表明，通过改变C3单元结构的对称性破缺不仅能够诱导产生可调的多重法诺共振效应，还能构建基于该效应的自参考光学传感。此外，通过改变圆环单元结构的内半径能够实现基于法诺凹陷深度的辐射监测传感。该研究为设计紧凑、可调谐的法诺共振光子器件提供了新的视角，同时可将周期性亚波长金属纳米结构扩展至生物传感和光通信领域的相关应用。 In this study, we numerically investigate surface plasmonic triple Fano resonances and optical sensing in the near-infrared band using a hybrid metasurface consisting of concentric C3-hole and circular-ring-aperture unit cells. The results reveal that by changing the symmetry breaking of the C3 unit cells, we can not only induce a tunable multi Fano resonance effect but also enable self-reference optical sensing. In addition, a radiation monitoring sensing capability, which depends on the depth of the Fano dips, can be realized by varying the inner radius of the circular-ring-aperture unit cells. Our results provide a new perspective for the design of compact and tunable Fano resonance photonic devices and enable the incorporation of periodic subwavelength metal nanostructures into relevant biosensing and optical communication applications.
作者机构：
[Lu, Zhendong; Luo, Xiao-Qing; Liu, Qin-Ke; Luo, XQ; Zhou, Yaojie; Wang, Xin-Lin] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.;[Li, Yan] Univ South China, Sch Nucl Sci & Technol, Hengyang 421001, Peoples R China.;[Liu, W. M.] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.;[Wang, Xin-Lin] Univ South China, Sch Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang 421001, Peoples R China.
通讯机构：
[Luo, XQ ] U;Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
摘要：
Chiral metasurfaces, with appealing properties for studying light-matter interactions at the nanoscale, have emerged as a promising platform for the realization of chiral optical responses, thereby showing advantages in chirality-related applications. The conventional approaches primarily concentrate on circular dichroism and the high Q factor of the chiral resonances, while little attention has been paid to the aspects of flexibility and controllability in the modulation of optical chirality, further inhibiting the implementation of tunable and multifunctional chiral metadevices. Here, we employ a planar chiral silicon metasurface governed by bound states in the continuum (BICs) to unravel steerable chiral optical responses. In particular, the BIC-based intrinsic and extrinsic planar chiralities can be precisely steered by breaking the in-plane symmetry and the illumination symmetry, respectively. Moreover, a hybrid Si−VO2 metasurface, manifested by the chiral coupled-mode theory, showcases the feasibility of actively tuning the dissipative loss while maintaining chiral quasi-BICs, then yielding desired loss-steered optical chirality. Our results provide alternative insights into tunable optical chirality and pave the way for advancements in chiroptical applications.
作者：
Qinmao Wu;Shangting Jiang;Ye Zhang;Hongyu He;Xinlin Wang
作者机构：
[Shangting Jiang] School of Nuclear Science and Technology, University of South China, Hengyang, China;[Qinmao Wu; Ye Zhang; Hongyu He] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, Hengyang, China;[Xinlin Wang] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, Hengyang, China<&wdkj&>School of Nuclear Science and Technology, University of South China, Hengyang, China
会议名称：
2023 International Seminar on Computer Science and Engineering Technology (SCSET)
会议时间：
April 2023
会议地点：
New York, NY, USA
会议论文集名称：
2023 International Seminar on Computer Science and Engineering Technology (SCSET)
关键词：
Graphene;Application;Electronics;Electricity
摘要：
Since its discovery, graphene has attracted widespread interest as a two-dimensional material composed of carbon atoms. It has a unique lattice structure and excellent properties, including high electrical conductivity, excellent carrier mobility, outstanding optoelectronic properties, excellent mechanical properties, chemical stability, and thermal conductivity. This makes graphene a great potential in the field of electrical and electronic devices. Graphene can be used in high-speed electronic devices, high-performance transistors, flexible displays, solar cells, photo detectors, and light sensors. This paper introduces the structure, properties, preparation, and characterization methods of graphene and its application in electrical and electronic fields, and summarizes its application potential and challenges in this field. All in all, graphene, as a material with unique properties, has broad application potential in the field of electronic and electrical devices and provides new opportunities for the development of electronic technology.
通讯机构：
[Yuehua Li] S;School of Electrical Engineering, University of South China, Hengyang 421001, China<&wdkj&>Author to whom correspondence should be addressed.
关键词：
pixel circuit;voltage programming;threshold voltage variation;mobility variation;OLED degradation
通讯机构：
[Hui Lin; Xinlin Wang] A;Authors to whom correspondence should be addressed.<&wdkj&>Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Mechanical Engineering, University of South China, Hengyang 421001, China<&wdkj&>Authors to whom correspondence should be addressed.<&wdkj&>School of Mechanical and Electrical Engineering, Putian University, Putian 351100, China
作者机构：
[Jiang, Shangting; Li, Ye; Wang, Xinlin] School of Nuclear Science and Technology, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang;421001, China;[Chen, Zhiyong; Zhu, Weihua; Wu, Qinmao; He, Hongyu] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang;[Jiang, Shangting; Li, Ye; Chen, Zhiyong; Zhu, Weihua; Wu, Qinmao; He, Hongyu; Wang, Xinlin] 421001, China;[Wang, Xinlin] 421001, China<&wdkj&>Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang
通讯机构：
[Ye Li; Xinlin Wang] S;School of Nuclear Science and Technology, University of South China , No. 28, Changsheng West Road, Hengyang City, Hunan 421001, China
