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Modeling of Both Arrhenius and Non-Arrhenius Temperature-Dependent Drain Current for Organic Thin-Film Transistors

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成果类型:
期刊论文
作者:
He, Hongyu*;Xiong, Chao;Yin, Junli;Wang, Xinlin;Lin, Xinnan;...
通讯作者:
He, Hongyu
作者机构:
[He, Hongyu; Wang, Xinlin; Yin, Junli] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
[Xiong, Chao] Changzhou Inst Technol, Sch Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China.
通讯机构:
[He, Hongyu] U
Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
语种:
英文
关键词:
Carrier concentration;drain current model;temperature characteristics;thin-film transistor (TFT);trap states
期刊:
IEEE Transactions On Electron Devices
ISSN:
0018-9383
年:
2020
卷:
67
期:
11
页码:
5091-5096
基金类别:
Manuscript received September 5, 2020; revised September 14, 2020; accepted September 16, 2020. Date of publication September 28, 2020; date of current version October 22, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61774010, in part by the Hunan Provincial Natural Science Foundation under Grant 2019JJ40246, in part by the Hunan Provincial Key Laboratory of Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture under Grant 2018TP1041, in part by the Shenzhen Peacock Plan Technology Innovation Project under Grant KQJSCX20170728102129176, and in part by the Shenzhen Scientific Research Program under Grant JCYJ20170810163407761 and Grant JCYJ20180504165449640. The review of this article was arranged by Editor G. Ghione.
机构署名:
本校为第一且通讯机构
院系归属:
电气工程学院
摘要:
To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack's trap limited carrier conduction theory, the analytical drain current model is developed. The temperature-dependent trap states' density is presented to explain the origin of the effective trapped ca...

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