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Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics

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成果类型:
期刊论文
作者:
He, Hongyu*;Xiong, Chao;Yin, Junli;Wang, Xinlin;Lin, Xinnan;...
通讯作者:
He, Hongyu
作者机构:
[He, Hongyu; Wang, Xinlin; Yin, Junli] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
[He, Hongyu; Zhang, Shengdong; Lin, Xinnan] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
[Xiong, Chao] Changzhou Inst Technol, Sch Photoelect Engn, Changzhou 213032, Jiangsu, Peoples R China.
通讯机构:
[He, Hongyu] U
Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
语种:
英文
关键词:
Numerical models;Analytical models;Capacitance;Mathematical model;Temperature;Electron traps;Integrated circuit modeling;Capacitance model;drain current model;field-effect mobility;InGaZnO (IGZO);temperature characteristics;thin-film transistor (TFT)
期刊:
IEEE Transactions On Electron Devices
ISSN:
0018-9383
年:
2020
卷:
67
期:
9
页码:
3637-3644
基金类别:
Manuscript received June 27, 2020; accepted July 9, 2020. Date of publication July 29, 2020; date of current version August 21, 2020. This work was supported in part by the National Natural Science Foundation of China under Grant 61774010, in part by the Hunan Provincial Natural Science Foundation under Grant 2019JJ40246, in part by the Hunan Provincial Key Laboratory of Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture under Grant 2018TP1041, in part by the Shenzhen Peacock Plan Technology Innovation Project under Grant KQJSCX20170728102129176, and in part by the Shenzhen Scientific Research Program under Grant JCYJ20170810163407761 and Grant JCYJ20180504165449640. The review of this article was arranged by Editor K. C. Choi.
机构署名:
本校为第一且通讯机构
院系归属:
电气工程学院
摘要:
Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao-Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in the energy gap of the a-IGZO thin film. The numerical model is successful for the TFT in both the subthreshold regime and the above-threshold regime. In the subthreshold regime, considering that the trapped electron concentration in the deep trap states dominates the Poisson's equation, the surface-potential-based analytical model is presented. ...

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