With large-scale molecular dynamics, we investigate displacement cascades in monocrystalline silicon with regard to the effects of temperature, strain, and primary knock-on atom energy on defect generation and evolution. With temperature increasing, both the thermal spike region and the peak defect count increase, while the effect of temperature on the surviving defect number is negligible. Nevertheless, higher temperature shows negative effect on clustering of vacancy. The effects of uniaxial strain on defect production and clustering is negli...
