作者机构：
[徐守龙; 邹树梁; 余修武] School of Resource Environment and Safety Engineering, University of South China, Hengyang;421001, China;[吴其反] Department of Engineering Physics, Tsinghua University, Beijing;100084, China;[林奎成] Instituted of Materials, China Academy of Engineering Physics, Mianyang
通讯机构：
[Xu, S.; Zou, S.] S;[Han, Y.] C;School of Resource Environment and Safety Engineering, China;CNNC New Energy Company LimitedChina
作者机构：
[徐守龙; 邹树梁] School of Resource Environment and Safety Engineering, University of South China, Hengyang;Hunan;421001, China;Department of Engineering Physics, Tsinghua University, Beijing;100084, China
作者机构：
[徐守龙; 邹树梁; 匡雅; 郭赞] School of Environmental and Safety Engineering, University of South China, Hengyang;Hunan;421001, China;[黄有骏] Nuclear Power Institute of China, Chengdu;Sichuan
通讯机构：
[Zou, S.] S;School of Environmental and Safety Engineering, China
关键词：
探测器;互补金属氧化物半导体有源像素传感器;光子辐射响应;钳位光电二极管
摘要：
分析了含有4个晶体管的钳位光电二极管有源像素传感器(4T-PPD-APS)的结构特点以及γ射线光子在像元内的能量沉积过程。通过建立传感器像元及像素阵列仿真计算模型,并结合γ射线辐射响应实验,对有源像素传感器(APS)在不同光子能量及不同放射性水平条件下的响应特性进行了研究。研究结果表明:γ光子在光电二极管空间电荷区内沉积能量并形成扩散光电流是APS发生光子响应现象的根本原因;像素值的平均值随剂量率的增大呈先增大后趋于饱和的趋势;当典型事件区域内出现多个峰值时,像素值的统计值不能准确反映辐射场放射性水平。 The structural features and the energy deposition process of γ-ray photons in the pixels for the 4 transistors pinned photodiode active pixel sensors (4T-PPD-APSs) are analyzed. By the establishment of simulation calculation models of sensor pixels and pixel array and by the experiment of γ-ray radiation response, the response characteristics of the active pixel sensors (APS) under different photon energies and different radioactivity level conditions are investigated. The research results show that, the energy deposition of the γ photon at the photodiode spatial charge area and the formation of diffused photocurrent are the root causes for the photon response phenomena occurring in the APS. The mean pixel value first increases and then tends to saturate with the increase of the dose rate. When the multiple peaks appear in the typical event areas, the statistical pixel value cannot accurately reflect the radioactivity level of the radiation fields.
作者机构：
[Xu, Shoulong; Zou, Shuliang] Univ South China, Sch Environm & Safety Engn, Hengyang 421001, Peoples R China.;[Xu, Shoulong] Tsinghua Univ, Dept Engn Phys, Beijing 100084, Peoples R China.;[Han, Yongchao; Qu, Yantao] China Inst Atom Energy, Beijing 102413, Peoples R China.
通讯机构：
[Zou, Shuliang] U;Univ South China, Sch Environm & Safety Engn, Hengyang 421001, Peoples R China.
关键词：
active pixel sensor;video monitor;radiation detector;radiation damage;radiation response;nuclear accident
摘要：
In this paper, we present the availability of an active pixel sensor (APS) with four transistors (4T) as a video monitor and radiation detector. Analyzing radiation damage must be one of the first steps in recovering from nuclear accidents, and the radiation response characteristic is the basis for the use of 4T-APS to detect radiation. The goal of this work is to suggest the use of cameras with 4T-APS in widely distributed irradiation detectors. The total ionizing dose (TID) of radiation damage on 4T-APS provided a threshold. Radiation tolerance was improved with the help of a radiation shielding structure. The radiation response showed integration time dependence and pixel information dependence, and greater radiation response was observed from the pixels with lower grayscale values. Two methods are suggested based on different monitoring scenes. This study can help to greatly improve nuclear accident emergency response and the safety of nuclear facilities.
作者机构：
[徐守龙; 邹树梁; 郭赞; 匡雅] School of Environmental and Safety Engineering, University of South China, Hengyang;421001, China;[黄有骏] Nuclear Power Institute of China, Chengdu;610200, China;[徐守龙; 邹树梁; 郭赞; 匡雅] 421001, China
通讯机构：
School of Environmental and Safety Engineering, University of South China, Hengyang, China
