The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

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成果类型：

期刊论文

作者：

Jiang, Shangting;Li, Ye;Chen, Zhiyong;Zhu, Weihua;Wu, Qinmao;...

通讯作者：

Wang, Xinlin(wxl_ly000@aliyun.com)

作者机构：

[Jiang, Shangting; Li, Ye; Wang, Xinlin] School of Nuclear Science and Technology, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang

421001, China

[Chen, Zhiyong; Zhu, Weihua; Wu, Qinmao; He, Hongyu] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang

[Jiang, Shangting; Li, Ye; Chen, Zhiyong; Zhu, Weihua; Wu, Qinmao; He, Hongyu; Wang, Xinlin] 421001, China

[Wang, Xinlin] 421001, China<&wdkj&>Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, School of Electrical Engineering, University of South China, No. 28, Changsheng West Road, Hunan, Hengyang

通讯机构：

[Ye Li; Xinlin Wang] S

School of Nuclear Science and Technology, University of South China , No. 28, Changsheng West Road, Hengyang City, Hunan 421001, China

语种：

英文

期刊：

Magnetism and Magnetic Materials

ISSN：

2158-3226

年：

2022

卷：

期：

页码：

065311

DOI：

10.1063/5.0095061

基金类别：

This work was supported by the Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture (Grant No. 2018TP1041) and by the Molecular Dynamics Simulation of Irradiation Damage of Doped 4H–SiC Project (No. CX20200943).

机构署名：

本校为第一且通讯机构

院系归属：

电气工程学院

核科学技术学院

摘要：

With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H-SiC). The vacancy defect formation energy is smaller than the interstitial defect formation energy. The C vacancy defect formation energy is the smallest, while the Si interstitial defect formation energy is the largest. The defect formation energy is little affected by the defect position. The electronic band structure show...

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The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

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