With the first-principle method, we studied the effects of the type and position of defects on the defect formation energy, electronic band structure, and electron mobility of the 4-layer hexagonal system silicon carbon (4H-SiC). The vacancy defect formation energy is smaller than the interstitial defect formation energy. The C vacancy defect formation energy is the smallest, while the Si interstitial defect formation energy is the largest. The defect formation energy is little affected by the defect position. The electronic band structure show...
