Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method

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成果类型：

期刊论文

作者：

Wang, Chunxiang;Shi, Xuan;Liu, Shaoxiang;Zhao, Hongquan;Zhang, Wei

通讯作者：

Zhang, W;Zhao, HQ

作者机构：

[Wang, Chunxiang] Chongqing Univ, Chongqing 400044, Peoples R China.

[Liu, Shaoxiang; Zhang, Wei; Shi, Xuan; Wang, Chunxiang] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China.

[Wang, Chunxiang] Univ Chinese Acad Sci, Chongqing Coll, Chongqing 100064, Peoples R China.

[Zhao, Hongquan] Univ South China, Sch Elect Engn, Hengyang 421001, Hunan, Peoples R China.

[Zhang, Wei] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China.

通讯机构：

[Zhang, W ; Zhao, HQ ]

Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China.

Univ South China, Sch Elect Engn, Hengyang 421001, Hunan, Peoples R China.

语种：

英文

关键词：

thermal sublimation;mixed few-layer GeSe;direct bandgap;broadband spectra;GeSe nanosheets;PVD method

期刊：

ACS Applied Materials & Interfaces

ISSN：

1944-8244

年：

2023

卷：

期：

页码：

39732-39739

DOI：

10.1021/acsami.3c08027

基金类别：

Natural Science Foundation of Chongqing, China [cstc2019jcyj-zdxmX0003, cstc2019jcyj-msxmX0387, cstc2021jcyj-jqX0031]; National Nature Science Foundation of China [61775214]; Project of Chongqing Talents [CQYC202002064]; Youth Innovation Promotion Association of Chinese Academy of Sciences Interdiscipline Team Project under auspices of "Light of West" Program in Chinese Academy of Sciences [xbzg-zdsys-202106]; Young Scholar of Regional Development Program in Chinese Academy of Sciences [2021]; Hefei Advanced Computing Center

机构署名：

本校为通讯机构

院系归属：

电气工程学院

摘要：

Two-dimensional (2D) GeSe has been proven promising in fast and broadband optoelectronic applications for its complicated band structure, inert surface property, and excellent stability. The major challenge is the deficiency of the effective technique for controllably prepared large-scale few-to-monolayer GeSe films. For this purpose, a layer-by-layer thinning method by thermal sublimation for manufacturing large-scale mixed few-layer GeSe with direct bandgaps is proposed, and an optimized sublimation temperature of 300 °C in vacuum is evaluat...

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Preparation of Mixed Few-Layer GeSe Nanosheets with High Efficiency by the Thermal Sublimation Method

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