期刊论文

Application Research of Half-bridge Solid-state RF Power Supply Based on GaN Devices

中文

南华大学学报(自然科学版)

1673-0062

2019

33

2

49-54,60

10.19431/j.cnki.1673-0062.2019.02.008

本校为第一机构

随着电力电子行业的发展,射频电源对高效率、轻量化的要求逐渐提高.硅(Si)材料的理论极限,约束了Si功率器件在高频、高压及大功率等场所的应用.基于氮化镓(GaN)半导体材料制备的功率器件与Si器件相比,具有导通阻抗低、输入输出电容小等特性.基于这些特性,采用GaN管设计制作了一款开关频率为2 MHz的半桥式固态射频电源样机.通过电路的设计和优化,样机输出2 MHz的标准正弦波.样机的输出功率为14.9 W时,效率可达到95.5％,功率密度可达到78.9×10-3 W/cm3.同时,采用专为射频电源生产的Si功率器件替换掉样机上的GaN器件,验证了GaN器件与Si器件相比,可大幅度提高半桥式固态射频电源的整机效率和功率密...

With the development of the power electronics industry,the requirements for high efficiency and light weight of RF power sources have gradually increased.The theoretical limits of silicon (Si) materials constrain the application of Si power devices in high frequency,high voltage and high power applications.Compared with Si devices,power devices fabricated based on gallium nitride (GaN) semiconductor materials have lower on-resistance and smaller input-output capacitance.Based on these characteristics, a half-bridge solid-state RF power supply w...