期刊论文

Cheng, G. D.;Yan, S. Y.

英文

计算材料学(英文)

2057-3960

2018

154

60-64

10.1016/j.commatsci.2018.07.039

This work was supported by the Central Military Commission ( 17-163-15-XJ-002-002-04 ) and Scientific Research Project of the Department of Education in Hunan Province of China under Grant number 16C1380 and the double first class construct program of University of South China (no. 2017SYL16 ).

本校为第一且通讯机构

We investigated the optical properties and electronic structure of NV−1 center in diamond and 3C-SiC by combing photoluminescence spectroscopy (PL) and first-principles calculations. The NV−1 center in diamond and 3C-SiC were produced by 10 MeV electrons irradiation and 1 MeV silicon ions implantation at room temperature, respectively. We observed the zero phonon line (ZPL) of NV−1 center in 3C-SiC for the first time, which was different from that in diamond. The NV−1 centers in both host materials have the same configuration, which possess...