Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties

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成果类型：

期刊论文

作者：

Chen, Ruowang;Shi, Hui;Liu, Yu;Wang, Mingyuan;Yuan, Dundong;...

通讯作者：

Wan, N;Li, FY

作者机构：

[Shi, Hui; Chen, Ruowang; Yuan, Dundong; Shu, Junpeng; Wan, Neng; Tian, Ming; Akash, Md Al Shahriar; Wang, Mingyuan; Hu, Zhenning] Southeast Univ, Sch Integrated Circuits, Key Lab MEMS, Minist Educ, Nanjing 210096, Peoples R China.

[Liu, Yu; Li, Fengyu] Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

[Xue, Jiamin] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China.

[Zhao, Hong-Quan] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

通讯机构：

[Wan, N ] S

[Li, FY ] I

Southeast Univ, Sch Integrated Circuits, Key Lab MEMS, Minist Educ, Nanjing 210096, Peoples R China.

Inner Mongolia Univ, Sch Phys Sci & Technol, Hohhot 010021, Peoples R China.

语种：

英文

关键词：

contact resistance;Au_xIn_y alloy;GeSe;photodetector;MIGS (metal-induced gap states);DIGS (disorder-inducedgap states)

期刊：

ACS Applied Materials & Interfaces

ISSN：

1944-8244

年：

2025

卷：

期：

页码：

10158-10167

DOI：

10.1021/acsami.4c20063

基金类别：

National Natural Science Foundation of China [61504030, 61370042, 61006011, 12364038]; National Natural Science Foundation of China [KYCX22_0228]; Postgraduate Research & Practice Innovation Program of Jiangsu Province

机构署名：

本校为其他机构

院系归属：

电气工程学院

摘要：

Metal-semiconductor contact plays a significant role in devices such as transistors, photoemitters, and photodetectors. Here, the Au(x)In(y) alloy contact gives a state-of-the-art low R(C) (contact resistance) in GeSe devices. The R(C) of GeSe-Au(x)In(y) is measured to be 25 kΩ μm under channel carrier concentration around p = 2.490 × 10(10) cm(-2). This low R(C) is ascribed to a small barrier height of 16 meV. Our density functional theory calculation found the formation of a high conductive metallic GeSe-Au(x)In(y) interface due to indium ...

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Au-In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties

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