期刊论文

Wang, XL;He, Hongyu

英文

计算材料学(英文)

2057-3960

2025

246

113354

10.1016/j.commatsci.2024.113354

CRediT authorship contribution statement Shangting Jiang: Writing – review & editing, Writing – original draft, Visualization, Software, Resources, Investigation, acquisition, Formal analysis, Conceptualization. Ye Li: Writing – review & editing, Investigation. Ye Zhang: Writing – review & editing, Investigation. Changchang Chen: Writing – review & editing, Investigation. Zhiyong Chen: Writing – review & editing, Writing – original draft, Investigation, Data curation. Weihua Zhu: Writing – review & editing, Writing – original

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Four layer hexagonal SiC (4H-SiC) is a promising material for high temperature and high radiation environments, attributed to its excellent thermal conductivity and radiation resistance. However, the mechanism of radiation displacement cascades in 4H-SiC remains incomplete. This study employs molecular dynamics (MD) to explore the effects of radiation energy, direction and environmental temperature on displacement cascades in 4H-SiC. We simulated radiation displacement cascades in 4H-SiC under radiation energy ranging from 2 KeV to 10 KeV and temperature ranging from 0 K to 2100 K. We analyzed...