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Effects of radiation and temperature on displacement cascades in 4H-SiC: A molecular dynamic study

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成果类型:
期刊论文
作者:
Shangting Jiang;Ye Li;Ye Zhang;Changchang Chen;Zhiyong Chen;...
通讯作者:
Hongyu He
作者机构:
[Shangting Jiang; Ye Li] School of Nuclear Science and Technology, University of South China, Hengyang, Hunan 421001, China
[Ye Zhang; Changchang Chen] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, College of Mechanical Engineering, University of South China, Hengyang, Hunan 421001, China
[Zhiyong Chen; Weihua Zhu] School of Electrical Engineering, University of South China, Hengyang, Hunan 421001, China
School of Electronics Information and Electrical Engineering, Yangtze University, Jingzhou 434023, China
[Hongyu He] Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, College of Mechanical Engineering, University of South China, Hengyang, Hunan 421001, China<&wdkj&>School of Electronics Information and Electrical Engineering, Yangtze University, Jingzhou 434023, China
通讯机构:
[Hongyu He] H
Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture, College of Mechanical Engineering, University of South China, Hengyang, Hunan 421001, China<&wdkj&>School of Electronics Information and Electrical Engineering, Yangtze University, Jingzhou 434023, China
语种:
英文
期刊:
计算材料学(英文)
ISSN:
2057-3960
年:
2025
卷:
246
页码:
113354
基金类别:
CRediT authorship contribution statement Shangting Jiang: Writing – review & editing, Writing – original draft, Visualization, Software, Resources, Investigation, acquisition, Formal analysis, Conceptualization. Ye Li: Writing – review & editing, Investigation. Ye Zhang: Writing – review & editing, Investigation. Changchang Chen: Writing – review & editing, Investigation. Zhiyong Chen: Writing – review & editing, Writing – original draft, Investigation, Data curation. Weihua Zhu: Writing – review & editing, Writing – original
机构署名:
本校为第一且通讯机构
院系归属:
机械工程学院
电气工程学院
核科学技术学院
摘要:
Four layer hexagonal SiC (4H-SiC) is a promising material for high temperature and high radiation environments, attributed to its excellent thermal conductivity and radiation resistance. However, the mechanism of radiation displacement cascades in 4H-SiC remains incomplete. This study employs molecular dynamics (MD) to explore the effects of radiation energy, direction and environmental temperature on displacement cascades in 4H-SiC. We simulated radiation displacement cascades in 4H-SiC under radiation energy ranging from 2 KeV to 10 KeV and temperature ranging from 0 K to 2100 K. We analyzed...

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