期刊论文

Zuo, G.-P.

中文

核电子学与探测技术

0258-0934

2013

33

2

221-226

10.3969/j.issn.0258-0934.2013.02.023

10JJ9014:湖南省自然科学基金 2011TT2039:湖南省科技厅项目

本校为第一且通讯机构

利用蒙特卡罗方法研究了GaN、SiC等几种宽带隙半导体材料在β源辐照下的行为。结果表明表层中沉积的β粒子数密度随材料密度的增加而增加,其最大电子数密度与物质密度间存在近似的线性关系;电子数密度随粒子入射深度成指数衰减,随横向迁移距离的增加而迅速衰减,其横向最大迁移距离在6mm左右。相对高能电子而言,低能电子更容易发生电离作用,且电子的沉积能随入射深度逐渐减少。对于0.1~500keV的入射电子,GaN、SiC等半导体材料的背散射系数大约在0.04~0.38之间,其大小与材料及入射电子能量有关。β粒子在GaN、SiC等材料中的射程都比较短,对于0.5MeV的β粒子其最大射程不超过1mm。

Radiation - ionizing characteristics of GaN, SiC and other typical wide band - gap semiconductor materials irradiated by the β isotopic source were simulated using Monte Carlo method. The electron density of Material surface increased with the semiconductor density. A approximate linear relationship exist between the maximum electron density and the material density. The electron density is decreased exponentially with penetration depth and rapid attenuated with increasing the lateral migration distance. Its maximum migration length is about 6...