期刊论文、会议论文

He, Liang;Chen, XH;Liu, J

英文

2024 25th International Conference on Electronic Packaging Technology (ICEPT)

2836-9734

2024

1-4

2024 25th International Conference on Electronic Packaging Technology (ICEPT)

2024 25th International Conference on Electronic Packaging Technology (ICEPT)

07 August 2024

Tianjin, China

[Duan, Xiaoyue] Univ South China, Sch Elect Engn, Sci & Technol Reliabil Phys & Applicat Elect Comp, Hengyang, Peoples R China.^[Li, Pinbo;He, Liang;Shi, Yijun;Chen, Xinghuan;Ni, Yiqiang;Chen, Yiqiang] Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou, Peoples R China.^[Liu, Jun] Univ South China, Sch Elect Engn, Hengyang, Peoples R China.^[He, Zhiyuan] Guangdong Univ Technol, Sch Integrated Circuits, Guangzhou, Peoples R China.

345 E 47TH ST, NEW YORK, NY 10017 USA

IEEE

979-8-3503-5381-5

10.1109/ICEPT63120.2024.10668686

Key -Area Research and Development Program of Guangdong Province [2022B0701180002, 2023B0101200005, 2020B010173001]; National Natural Science Foundation of China [62004046, 52107184, 61904207]; Guangzhou Basic and Applied Basic Research Foundation [2023A04J0324, 202201010923]; Chongqing Municipal Natural Science Foundation [CSTB2022NSCQMSX0312]

本校为第一且通讯机构

We investigate the degradation effects of neutron irradiation on AIGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) in this work. The performance of the devices is characterized through relevant electrical current-voltage (I-V) test and capacitance- voltage (C-V) test. The result indicates that the electrical parameter of the device degrades after neutron irradiation, such as positive shift of threshold voltage, reduction in output drain current, and the increase of the on-resistance. Additionally, combining with the frequency-dependent conductance method, i...