期刊论文

The memory effect of Pt/TiO2/Nb：SrTiO3/Pt devices

中文

天津理工大学学报

1673-095X

2016

32

1

44-48

10.3969/j.issn.1673-095X.2016.001.011

11347203:国家自然科学基金 2013XQD37:南华大学博士启动基金

本校为第一机构

本文以Pt/TiO2/Nb:SrTiO3/Pt为研究对象,研究了此种器件的阻变存储效应和容变存储效应.所研究的器件表现出明显的双极多态存储性能,同时也具备负电容的特性.在正、反向偏压的作用下,器件能够实现从导通状态到绝缘态或者其他程度的导通态的转变.不仅如此,该器件还表现出与初始状态关联的负电容特性.产生这些现象的原因可认为是氧空位在外加电场的驱动下移动造成的,从而使得器件的导电状态发生变化,同时也使得电荷变化滞后于电压的变化,产生了负电容现象.

Pt/TiO2/Nb：SrTiO3/Pt devices show pronounced bipolar multilevel resistive switching behaviors and negative capacitance effects. The active layerTiO2 was grown on Nb-doped SrTiO3 by molecular beam epitaxial technology. With the aid of forward or reverse bias,the devices can be switched to insulating or different conductive states. The devices show prominent negative capacitance effects strongly depending on the initial state of high or low resistance. The observed results may be attributed to oxygen vacancy′ s migration-induced conductive stat...