Influence of irradiation-induced point defects on nanotribological properties of m-plane GaN investigated using molecular dynamics simulation

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成果类型：

期刊论文

作者：

Duan, Lingfeng;Tan, Shilian;Liu, Yang;Guo, Jian

通讯作者：

Guo, J

作者机构：

[Guo, Jian; Duan, Lingfeng; Tan, Shilian; Guo, J; Liu, Yang] Univ South China, Sch Mech Engn, Hengyang 421001, Hunan, Peoples R China.

通讯机构：

[Guo, J ] U

Univ South China, Sch Mech Engn, Hengyang 421001, Hunan, Peoples R China.

语种：

英文

关键词：

GaN;Irradiation defects;Nanowear;Subsurface damage;Molecular dynamics

期刊：

Materials Today Communications

ISSN：

2352-4928

年：

2024

卷：

页码：

107814

DOI：

10.1016/j.mtcomm.2023.107814

基金类别：

CRediT authorship contribution statement Lingfeng Duan: Data curation, Investigation, Writing – original draft, Writing – review & editing. Shilian Tan: Investigation. Yang Liu: Investigation. Jian Guo: Conceptualization, acquisition, Methodology, Project administration, Supervision, Writing – review & editing.

机构署名：

本校为第一且通讯机构

院系归属：

机械工程学院

摘要：

Molecular dynamics (MD) simulation toward the irradiation cascade collision of GaN (10−10) by using different primary knock-on atom (PKA) energies was performed. Simulation results showed that point defects comprising vacancies and interstitials in pairs increased with increased PKA energy. The number of stable defects after cascade collision was linearly related to the PKA energy, which well agreed with the Norgett–Robinson–Torrens equation. Then, we investigated the effect of irradiation-induced point defects on the nanotribological proper...

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Influence of irradiation-induced point defects on nanotribological properties of m-plane GaN investigated using molecular dynamics simulation

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