Radiation-induced defects in the InGaN/GaN superlattice structure

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作者信息关键词期刊信息基础信息归属信息摘要

成果类型：

期刊论文

作者：

Li, Ye;Jiang, Shangting;He, Hongyu;Wang, Xinlin

通讯作者：

Wang, XL

作者机构：

[Li, Ye; Wang, Xinlin; Wang, XL; Jiang, Shangting] Univ South China, Sch Nucl Sci & Technol, Hengyang 421001, Peoples R China.

[Li, Ye] Hunan Inst Technol, Hengyang 421002, Peoples R China.

[He, Hongyu] Yangtze Univ, Yangtze Univesrs, Jingzhou 434023, Peoples R China.

[Wang, Xinlin; Wang, XL] Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang 421001, Peoples R China.

[Wang, Xinlin; Wang, XL] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

通讯机构：

[Wang, XL ] U

Univ South China, Sch Nucl Sci & Technol, Hengyang 421001, Peoples R China.

Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang 421001, Peoples R China.

Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.

语种：

英文

关键词：

Radiation damage;InGaN/GaN superlattice;molecular dynamics;semiconductor

期刊：

PHYSICA SCRIPTA

ISSN：

0031-8949

年：

2024

卷：

期：

页码：

065407

DOI：

10.1088/1402-4896/ad4794

基金类别：

Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture; [2018TP1041]

机构署名：

本校为第一且通讯机构

院系归属：

机械工程学院

电气工程学院

核科学技术学院

摘要：

With the molecular dynamics method, this paper investigates radiation-induced defects in the In0.16Ga0.84N/GaN superlattice structure (SLS) and the In0.04Ga0.96N/GaN SLS. In the temporal evolution of cascades, most of vacancies recombine with interstitials. The Monte Carlo simulations about the proportions of PKAs induced by 3 MeV protons were also considered in this work for calculating the weighted averages of surviving defects. For the In0.16Ga0.84N/GaN SLS irradiated by protons, around 82.6 percent of surviving vacancies are Ga vacancies while around 88.9 percent of surviving interstitials...

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Radiation-induced defects in the InGaN/GaN superlattice structure

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