期刊论文

Research on Applications of Solid-state RF Power Supply Based on GaN Devices

中文

电源学报

2095-2805

2020

18

04

116-122

10.13234/j.issn.2095-2805.2020.4.116

本校为第一机构

随着电力电子技术的发展,射频电源由电子管电源发展成现在的晶体管射频电源。氮化镓GaN(gallium nitride)作为第三代宽禁带半导体材料的典型代表,具有宽禁带、高临界击穿场强、高电子饱和漂移速度以及高导通的AlGaN/GaN异质结二维电子气2DEG(two-dimensional electrons gas)等优点。GaN功率器件与硅(Si)功率器件相比,具有导通阻抗低,输入、输出电容小等特性,这些特性使得GaN功率器件高开关速度、低损耗。在E类功率射频电源的基础上,采用GaN功率器件设计制作了一款开关频率为4 MHz、功率可调的全固态射频电源实验样机。通过电路的设计和优化,样机的输出功率为21.4 W时,效率达到了96.7%;同时,采用...

Along with the development of power electronics technology, RF power has been developed from the tube power supply to the transistor RF power supply at present. As a typical representative of the third-generation wide bandgap semiconductor materials, gallium nitride(GaN) has excellent properties such as wide bandgap, high critical breakdown field strength, high electron saturation drift velocity, and highly conductive AlGaN/GaN heterojunction two-dimensional electrons gas(2DEG). Compared with silicon(Si) power devices, GaN power devices have ch...