Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

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成果类型：

期刊论文

作者：

Jiang, Shangting;Li, Ye;Zhang, Ye;Chen, Changchang;Chen, Zhiyong;...

通讯作者：

Wang, XL;He, Hongyu;He, HY

作者机构：

[Li, Ye; Wang, Xinlin; Wang, XL; Jiang, Shangting] Univ South China, Sch Nucl Sci & Technol, Hengyang, Hunan, Peoples R China.

[He, Hongyu; He, HY; Wang, Xinlin; Wang, XL; Chen, Changchang] Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang, Hunan, Peoples R China.

[Zhu, Weihua; Zhang, Ye; Chen, Zhiyong] Univ South China, Sch Elect Engn, Hengyang, Hunan, Peoples R China.

[He, Hongyu; He, HY] Yangtze Univ, Sch Elect Informat & Elect Engn, Jingzhou, Peoples R China.

通讯机构：

[He, HY; Wang, XL ] U

[He, HY ] Y

Univ South China, Sch Nucl Sci & Technol, Hengyang, Hunan, Peoples R China.

Univ South China, Coll Mech Engn, Hunan Prov Key Lab Ultrafast Micro Nano Technol &, Hengyang, Hunan, Peoples R China.

Yangtze Univ, Sch Elect Informat & Elect Engn, Jingzhou, Peoples R China.

语种：

英文

期刊：

RSC Advances

ISSN：

2046-2069

年：

2024

卷：

期：

页码：

27778-27788

DOI：

10.1039/d4ra04424j

基金类别：

Hunan Province Key Laboratory for Ultra-Fast Micro/Nano Technology and Advanced Laser Manufacture [2018TP1041]; Molecular Dynamics Simulation of Irradiation Damage of Doped 4H-SiC Project [CX20200943]

机构署名：

本校为第一且通讯机构

院系归属：

机械工程学院

电气工程学院

核科学技术学院

摘要：

Four-layer hexagonal silicon carbide (4H-SiC) is a promising material for high-temperature and radiation-rich environments due to its excellent thermal conductivity and radiation resistance. However, real 4H-SiC crystals often contain Shockley-type stacking faults (SSF), which can affect their radiation resistance. This study employed molecular dynamics (MD) simulation method to explore the effects of SSF on radiation displacement cascades in 4H-SiC. We conducted a comprehensive study of various SSF within the crystalline framework of 4H-SiC, and analyzed their stacking fault energy (SFE). We ...

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Molecular dynamics simulating the effects of Shockley-type stacking faults on the radiation displacement cascades in 4H-SiC

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