版权说明 操作指南
首页 > 成果 > 详情

Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

认领
导出
Link by DOI
反馈
分享
QQ微信 微博
成果类型:
期刊论文
作者:
He, Hongyu;Yin, Junli;Lin, Xinnan;Zhang, Shengdong
作者机构:
[He, Hongyu] Yangtze Univ, Sch Elect & Informat, Jingzhou 434023, Peoples R China.
[Yin, Junli] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China.
[Lin, Xinnan] Anhui Polytech Univ, Sch Integrated Circuits, Wuhu 241000, Peoples R China.
[He, Hongyu; Zhang, Shengdong] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China.
语种:
英文
关键词:
Ambipolar organic thin-film transistor (OTFT);Computational modeling;drain current model;Electron traps;Integrated circuit modeling;Mathematical models;Organic semiconductors;Organic thin film transistors;Semiconductor device modeling;surface potential;temperature characteristics;trap states
期刊:
IEEE Transactions On Electron Devices
ISSN:
0018-9383
年:
2023
卷:
71
期:
1
页码:
11-17
基金类别:
Shenzhen Municipal Scientific Program (Grant Number: JCYJ20200109140610435, SGDX20201103095610029 and JCYJ20220818100808019) 10.13039/501100014762-Startup Funding of Anhui Polytechnic University 10.13039/501100007923-Double Tops Teaching Staff Construction of Yangtze University (Grant Number: 8021003201) 10.13039/100009377-Research Foundation of Education Department of Hunan Province (Grant Number: 18C0431)
机构署名:
本校为其他机构
院系归属:
电气工程学院
摘要:
A surface-potential-based drain current model is presented for ambipolar organic thin-film transistors (OTFTs). First, following the multiple trapping and release (MTR) conduction mechanism, a drain current model is presented for unipolar OTFTs considering exponentially distributed trap state density in the energy gap of an organic semiconductor. Next, from the model for unipolar OTFTs, analyzing electrons or (and) holes in different regimes, the model for ambipolar OTFTs is presented. The presented model can describe the drain current by compact expressions and can estimate the trap states de...

反馈

验证码:
看不清楚,换一个
确定
取消

成果认领

标题:
用户 作者 通讯作者
请选择
请选择
确定
取消

提示

该栏目需要登录且有访问权限才可以访问

如果您有访问权限,请直接 登录访问

如果您没有访问权限,请联系管理员申请开通

管理员联系邮箱:yun@hnwdkj.com