Introducing effective temperature into Arrhenius equation with Meyer-Neldel rule for describing both Arrhenius and non-Arrhenius dependent drain current of amorphous InGaZnO TFTs
School of Electrical Engineering, University of South China, Hengyang 421001, China<&wdkj&>School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen 518005, China<&wdkj&>School of Automation, Guangdong University of Technology, Guangzhou 510006, China
KeyArea Research and Development Program of Guangdong Province [2019B010145001]; Science and Technology Program of Guangdong Province [2019A1515012127]; National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61774010]; Hunan Provincial Natural Science FoundationNatural Science Foundation of Hunan Province [2019JJ40246]; Hunan Provincial Key Laboratory of UltraFast Micro/Nano Technology and Advanced Laser Manufacture [2018TP1041]; Shenzhen Peacock Plan Technology Innovation Project [KQJSCX20170728102129176]; Shenzhen Scientific Research Program [JCYJ20170810163407761, JCYJ20180504165449640]
机构署名：
本校为第一机构
院系归属：
电气工程学院
摘要：
The drain current of the amorphous InGaZnO thin-film transistors (TFTs) shows the Arrhenius and the non-Arrhenius dependence at the high temperature and the low temperature respectively. The gate-voltage-dependent effective temperature is introduced into the Arrhenius equation. Considering the normal Meyer-Neldel (MN) rule and the inverse MN rule, the equation successfully describes both the Arrhenius and the non-Arrhenius dependent drain current at the low and the high gate voltage. The calculated results of the equation are verified by the available experimental data of the amorphous La-dope...
