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Effect of abrasive size on nano abrasive machining for wurtzite GaN single crystal via molecular dynamics study

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成果类型:
期刊论文
作者:
Wang, Yongqiang;Guo, Jian*
通讯作者:
Guo, Jian
作者机构:
[Guo, Jian; Wang, Yongqiang] Univ South China, Sch Mech Engn, Hengyang 421001, Hunan, Peoples R China.
通讯机构:
[Guo, Jian] U
Univ South China, Sch Mech Engn, Hengyang 421001, Hunan, Peoples R China.
语种:
英文
关键词:
Crystal structure;Gallium nitride;III-V semiconductors;Molecular dynamics;Piles;Zinc sulfide;Abrasive machining;Deformation behaviour;Elastic recovery;Gallium nitrides (GaN);Hexagonal structures;Local phase transition;Molecular dynamics simulations;Severe plastic deformations;Single crystals
期刊:
Materials Science in Semiconductor Processing
ISSN:
1369-8001
年:
2021
卷:
121
页码:
105439
基金类别:
This work was financially supported by the Natural Science Foundation of Hunan province (Grant no. 2018JJ2328 and 2019JJ50518 ), and the National Natural Science Foundation of China (Grant no. 51805240 ). The authors would like to acknowledge the HPC center in University of South China for the simulation running. This work was financially supported by the Natural Science Foundation of Hunan province (Grant no. 2018JJ2328 and 2019JJ50518), and the National Natural Science Foundation of China (Grant no. 51805240). The authors would like to acknowledge the HPC center in University of South China for the simulation running.
机构署名:
本校为第一且通讯机构
院系归属:
机械工程学院
摘要:
Molecular dynamics simulations were used to explore the effect of abrasive size on the nano abrasive machining for wurtzite gallium nitride (GaN) single crystal. The deformation behaviours, varied with the abrasive size, were systematically analysed. The simulation results show that increasing the abrasive size results in more severe plastic deformation and machining-induced hardening, which consequently cause an increase in atomic temperature, strain, stress, and cutting forces. The use of larger abrasive produces greater compression, thus boo...

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