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Electronic properties and conductance suppression of defected and doped zigzag graphene nanoribbons

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成果类型:
期刊论文
作者:
Cao, C.;Chen, L. N.;Zhang, D.;Huang, W. R.;Ma, S. S.;...
通讯作者:
Xu, H.
作者机构:
[Zhang, D.; Ma, S. S.; Cao, C.; Xu, H.; Huang, W. R.; Chen, L. N.] Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China.
[Chen, L. N.] Univ S China, Sch Comp Sci & Technol, Hengyang 421001, Peoples R China.
[Huang, W. R.] Changsha Univ Sci & Technol, Sch Phys & Elect Sci, Changsha 410004, Hunan, Peoples R China.
通讯机构:
[Xu, H.] C
Cent S Univ, Sch Phys Sci & Technol, Changsha 410083, Hunan, Peoples R China.
语种:
英文
关键词:
A. Graphene nanoribbons;D. Electronic structures and transport property;D. Impurity and defect;E. First-principles
期刊:
Solid State Communications
ISSN:
0038-1098
年:
2012
卷:
152
期:
1
页码:
45-49
基金类别:
Natural Science Foundation of Hunan ProvinceNatural Science Foundation of Hunan Province [11JJ3073]; Natural Science Foundation of the education department of Hunan ProvinceNatural Science Foundation of Hunan Province [07JJ3102]; High Performance Computing Center of CSU
机构署名:
本校为其他机构
院系归属:
计算机科学与技术学院
摘要:
By using the first-principles calculation based on density functional theory, we investigate the electronic structures and transport properties of the defected and doped zigzag graphene nanoribbons (ZGNRs). The effects of multivacancies defects and impurities have been considered. The results show that band structures of ZGNRs can be tuned strongly and currents drop drastically due to the defect and impurities. Moreover, the notable suppression of conductance can be found near the Fermi level, leading to the negative differential resistance (NDR) behavior under low bias. This effect presents a...

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